Abstract
In this article, vanadium dioxide (V O2) based tunable wideband terahertz absorber is proposed. It consist of a gold plated ground plane and V O2 based concentric ring resonating geometry on the backside and top surfaces of dielectric material Silicon dioxide (SiO2). Its unit cell has dimension of 30 × 30×9.235μm3. It achieves polarization insensitive absorption A≥90% from 2.279 to 5.699 THz with average absorption >92% and Full Width at Half Maxima (FWHM) of 4.6131 THz. It shows incident angle stability up to θ=20° for A≥90% and up to θ=45° for A≥80%. The proposed absorber’s peak absorption can be tuned from 3% to 94% by changing V O2 conductivity dependent on temperature. As a sensor, it has high sensitivity of 697.7 GHz/RIU for RI sensing, 586.096 GHz/RIU for adrenal gland cell cancer detection and around 650.0 GHz/RIU for urine concentration detection.
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