Abstract
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly ort 100 mm Si substrate using a barium fluoride (BaF 2 ) buffer layer. BaF 2 buffer layer was used to overcome the large lattice and thermal expansion mismatch. Structure characteristics of the PbTe films grown on silicon substrates with the BaF 2 buffer layer were investigated by x - ray phase analysis. We have fabricated PbTe on Si sensor with cutoff wavelength 5,2 μm.
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