Abstract
NbO2-based selectors can effectively suppress cross-talk interference between memory cells in the high-density cross-point nonvolatile memory arrays. By doping titanium into the niobium oxide, the Pt/Ti:NbOx/TiN selector device based on insulator–metal transition (IMT) effect presented typical threshold switching (TS) behavior. Compared with the undoped device (UD), the doped device (DD) performed forming-free, ultra-high on-state current and self-compliance properties. Meanwhile, its performances were stable in 1000 consecutive cycles of TS. Subsequently, the mechanism of the device was understood based on oxygen vacancies adjusted by Ti atom. This device provided an approach to drive memory for V-point structure due to the ultra-high on-state current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
