Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film

Abstract

We demonstrate a forming-free electrochemical metallization resistive memory device (Ag/TiOxNy/Pt) based on the nanoporous titanium oxynitride (TiOxNy) thin film. Due to the nanoporous structure of TiOxNy, Ag atoms can migrate into the film during the Ag electrode evaporation process, resulting in a pre-formed Ag conductive filament inside the switching layer. This is responsible for the forming-free resistive switching behavior. Subsequently, resistive switching with attractive performance is achieved after a reset process, including good endurance, low operation voltages, and fast switching speed. The forming-free and reliable switching characteristics suggest that nanoporous TiOxNy thin film is one of the promising material candidates for future nonvolatile memory applications.