Abstract
To fabricate electrical interconnections through a semiconductor wafer, an array of holes is laser drilled in the wafer and then a conductor is formed in the holes. Six techniques, including capillary wetting, wedge extrusion, wire insertion, electroless plating, electroforming, and double-sided sputtering and through-hole electroplating were used to form conductors in the array of laser-drilled holes in silicon-on-sapphire (SOS) wafers. These techniques are described, and their respective strengths and weaknesses discussed and compared.
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