Abstract
Initial stages of epitaxial growth and formation ofCaF2 nanostructures on Si(001) were studied. A variety ofnanostructures were grown including ultrathin two-dimensional layersat 750 °C, quasi-one-dimensional stripes at 650 °C andwell-ordered dots at lower growth temperatures. Atomic forcemicroscopy and reflection high-energy electron diffraction were usedto measure the nanostructure shape and lattice orientation. Theevolution of the surface electronic structure under different growthconditions was studied by ultraviolet photoelectron spectroscopy andmetastable de-excitation spectroscopy. The leading role of thewetting layer in high-temperature formation of the fluorite-siliconinterface was established.
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