Abstract
The paper considers ohmic contacts of Au-TiBx-Al-Ti-n-GaN, Au-Pd-Ti-Pd-n-AlN and Au-Pd-Ti-n-C to the promising for use in microelectronics wide-gap semiconductors. Ohmic contact formation takes place after sequential layering of metal with further fast thermal processing, which leads to solid-phase reactions between the semiconductor and metal. It is shown that the use of X-ray amorphous TiBx layer in ohmic contact as the diffusion barrier allows for creating thermal stability contacts up to T = 900 °C. Current flow in the considered ohmic contacts is described using a model with current flow along metal shunts considering diffusion limitation on the charge carrier supply.
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