Abstract
This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2GeO4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.
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