Abstract
Metal-ion implantation followed by thermal oxidation was carried out to fabricate zinc-oxide (ZnO) nanoparticles (NPs) in silica glass (SiO2). A SiO2 substrate was implanted with Zn+ ions of 60keV up to 1.0×1017ions/cm2. In the as-implanted state, the sample shows a strong absorption peak at ∼4.8eV and a weak one at ∼1.2eV due to Zn metallic NPs. After annealing in oxygen gas at 700°C for 1h, the absorption in the visible region disappears and a new absorption edge appears at ∼3.25eV. The grazing incidence X-ray diffraction (GXRD) confirms the formation of ZnO NPs. The ZnO NPs show a photoluminescence (PL) peak at 3.32eV under pulsed nitrogen-laser excitation at 3.68eV. Annealing at 900°C induces an additional shift of the absorption edge to ∼5.3eV. The additional shift indicates the formation of a Zn2SiO4 phase which was confirmed by GXRD.
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