Abstract
Zinc inverted opals have been fabricated by means of electrochemical deposition templated on polystyrene artificial opals grown on indium tin oxide (ITO) and n-doped silicon substrates. Several differences in the infiltration were observed between samples infilled by linear cyclic voltammetry and square wave pulsating potential approaches, leading to the fabrication of metallic photonic crystals with different topologies on semiconducting substrates. The samples have been characterized by scanning electronic microscopy (SEM), energy dispersive X-ray analysis (EDX), and X-ray powder diffraction. This is the first time that Zn inverse opals have been fabricated and this work proves the possibility of growing macroporous structures by electrochemical methods on different semiconductor substrates.
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