Abstract
The formation of ytterbium silicide on (111) and (001)Si substrates was studied by both conventional transmission electron microscope (TEM) and high-resolution transmission electron microscope (HRTEM). Amorphous interlayers were formed between Yb thin films and (111)Si substrates during room-temperature deposition. The interlayer grew thicker at elevated temperatures. Epitaxial YbSi2−x films were formed after annealing at 300°C for 30min. The films contain serious lattice distortion and a vacancy ordering superlattice structure. The vacancy ordering superlattice structure was transformed into an out-of-step structure after higher temperature annealing. For the films deposited on (001)Si, polycrystalline rather than epitaxial silicide was formed after high-temperature annealing.
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