Abstract
Two-dimensional (2D) arrays of InP-based In0.53Ga0.47As quantum dots are successfully formed using two different approaches of selective molecular beam epitaxial (MBE) growth. One is to introduce modulations into wire-arrays by growing wires on intentionally mis-oriented mesa-stripes based on our recent study on the effect of mis-orientation on the wire growth. The other is to carry out selective MBE growth on a 2D array of <100>-oriented square-mesa pedestals. Both types of InGaAs dot arrays show fairly strong photoluminescence (PL) and cathodoluminescence (CL) emissions, indicating the reasonably good crystal quality of the dots. Both approaches are found to be useful for constructing highly integrated networks of single electron devices.
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