Abstract
Uranium (U) deposition onto the Si (111) − 7×7 surface followed by annealing at 870K for 6min leads to the formation of 2D uranium silicide (USi1.67) film. The morphology and geometric structure have been studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED). The AlB2-type structure of USi1.67 epitaxial film is formed with a 1×1 periodicity. Morphologies of the crystalline USi1.67 film display triangular layered structures, and its electronic structure has been studied by a combination of angle-resolved photoemission spectroscopy (ARPES) and density functional theory calculations.
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