Formation of twinning-superlattice regions by artificial stacking of Si layers

Abstract

We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)( 3 × 3 )R30°-B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)( 3 × 3 )R30°-surface covered by at least 1 3 ML boron results in the formation of 180° rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes.