Formation of transparent ZnO layers by MePIIID

Abstract

ZnO thin films were deposited using metal plasma immersion ion implantation and deposition (MePIIID) with high voltage pulses from 0 to 10kV at a duty cycle of 9%. All films exhibit a (002) fibre texture of the hexagonal ZnO phase. With increasing bias voltage, an increased sub-band gap absorption was observed with spectroscopic ellipsometry, together with preferential sputtering of oxygen from the film. Only a partial reversal of this effect was obtained with an increased oxygen/zinc ratio on the supply side showing that additional radiation induced defects are present in the film at high pulse voltages.