Abstract
BF 2 + implantation and low temperature furnace annealing are used to form Ti silicide and shallow junctions for samples with multilayers of Si/Ti/Si. The formation of Ti silicides and the shallow junctions is investigated by Rutherford backscattering, the 19F(p, αγ) nuclear reaction, Cu K α X-ray diffraction and spreading resistance measurement. The mechanism of interaction of Ti and Si, and the influences of impurities F, O and a thin amorphous Si surface layer are discussed.
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