Abstract
Titanium nitride (TiN) films were formed on silicon (100) substrates at room temperature by energetic cluster impact deposition (ECID). The films show a gold-like color. The influence of deposition conditions, such as nitrogen partial pressure (P N2) and sputter current (I s), on the properties of the films, was investigated by Rutherford backscattering spectrometry (RBS), proton elastic scattering (PES) and X-ray diffraction (XRD). The RBS results show the film thickness is typically 360 nm. It is found using PES spectra that the relative content of nitrogen in the films increases first fast then slowly with the increase of nitrogen gas partial pressure (P N2). XRD results show the films appear to be (220) preferential orientation. Additionally, a certain amount of oxygen impurity was incorporated into the films. Some explanations for the above results are also given in this paper.
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