Abstract
In this paper we report on in-situ stress measurements during rapid thermal annealing of titanium-silicon multilayers. After formation of the metastable TiSi 2 C49 phase relaxation of the stress in the thin film is observed. The relaxation rate of the TiSi 2 C49 phase is dependent on the overall composition of the Ti-Si multilayer. The relaxation rate for Si/Ti 2 is considerably larger than for Si/Ti < 2. Also the temperature dependence of the relaxation is investigated.
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