Abstract
The formation of a TiN z /TiSi x bilayer by microwave-assisted nitrogen plasma nitridation of titanium film with changing microwave power has been studied. Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, X-ray diffractometry, and transmission electron microscopy were used to characterize the formation of TiN z /TiSi x bilayer and to examine the barrier properties. The results show that the nitrided and silicided Ti layers grow in thickness and increase in concentration according to microwave power increase, and that the samples treated above the power of 200 W have good film properties, and that the TiN z /TiSi x /Si structure has good diffusion barrier properties up to ∼500° C for 30 min heat treatment.
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