Abstract
Specific features of the formation of thick porous silicon layers on n-type silicon substrates in the galvanostatic mode have been studied. An abrupt change in the electrolyzer voltage with time was observed in the course of anodization with exposure to a visible light without the IR component. This abrupt change is accompanied by the formation of a large-grained disrupted silicon layer. It was shown that these effects are due to an insufficient density of holes, which are necessary for etching silicon. As a result, the mechanism for the generation of minority carriers changes from light generation to that of the avalanche type.
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