Abstract
A radio frequency magnetron sputtering method, specifically tailored for the deposition of thick, adherent cubic boron nitride (c-BN) thin films on silicon substrates, was developed. The surface morphology of the boron nitride thin films was changed by altering the noble gases (Kr, Ar, Ne, and He) in the chamber present during the sputtering. The sample prepared in the gas with He showed especially good adhesion. This method enabled us to grow a 1.7-μm-thick c-BN thin film on a Si(100) substrate in only rare gases at a low temperature for the first time. Fourier transform infrared spectroscopy (FT-IR) indicated that the fraction of sp3-bonded BN in the thick films was above 60%.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
