Abstract

A morphologically stable bulk heterojunction (BHJ) with a large heterojunction area is prepared by reducing the portion of the small band gap polymer (PTB7) and fullerene intermixture through a sequential deposition (SqD) of the nanostructured PTB7 and the fullerene layer. The nanostructured PTB7 layer is prepared using a ternary solvent composed of chlorobenzene, 1,8-diiodooctane (DIO) and 1-chloronaphthalene (1-CN). Adding DIO and 1-CN enhances the ordering of PTB7 chains and results in a nanostructured polymer surface. The grazing incidence X-ray diffraction results reveal that the SqD of the nanostructured PTB7 and fullerene layers forms the BHJ with little intermixing between the polymer and the fullerene domains compared to the BHJ formed by the deposition of the blended PTB7 and fullerene solution (BSD). The OPV utilizing the SqD processed BHJ (SqD-OPV) exhibits a power conversion efficiency (PCE) of 7.43%, which is similar to that when the BSD processed BHJ (BSD-OPV) is utilized. Furthermore, the SqD-OPV exhibits an excellent thermal stability. The SqD-OPV maintains its initial PCE even after thermal annealing at 140 °C for 10 days, whereas the BSD-OPV maintains 78% of its initial efficiency under the same condition.

Highlights

  • An alternative method of forming the bulk heterojunction (BHJ) through sequential deposition (SqD) has recently been reported by several researchers[6,7,8,9,10,11,12]

  • We have developed a method of increasing the surface area of (PTB7) film by roughening the surface of the polymer in nanoscale using a ternary solvent containing two different polymer chain ordering agents (OA)

  • We investigated whether the phenyl-C71-butyric-acid-methyl ester (PCBM) solvent dissolved the PTB7 bottom layer by spin-coating the PCBM solvent onto the PTB7 layer

Read more

Summary

Heterojunction by Reducing the Polymer and Fullerene Intermixing

Yoonhee Jang[1], Yun Ju Cho[1], Minjung Kim[1], Jeesoo Seok[1], Hyungju Ahn2 & Kyungkon Kim[1]. A morphologically stable bulk heterojunction (BHJ) with a large heterojunction area is prepared by reducing the portion of the small band gap polymer (PTB7) and fullerene intermixture through a sequential deposition (SqD) of the nanostructured PTB7 and the fullerene layer. As the BSD process does, the SqD-OPVs require an additional thermal annealing step to obtain a large heterojunction area because of the ineffective penetration of fullerenes into the polymer layer. The post thermal annealing process might form polymer and fullerene intermixtures It would be desirable for SqD-OPV that the crystalline and nanostructured polymer surface is preformed and utilized to form a large-area heterojunction with fullerene without an additional thermal annealing step. The roughened surface of the PTB7 film prepared by the ternary solvent was utilized to construct a BHJ with fullerene without a thermal annealing step via the SqD process. The thermal stability of SqD-OPV was significantly superior to that of the BSD-OPV

Results and Discussions
Methods
Author Contributions
Additional Information
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call