Abstract
We report on the formation of the ZnTe/(001) GaAs interface by molecular beam epitaxy. Techniques include X-ray photoelectron spectroscopy (XPS), high energy electron diffraction, grazing incidence X-ray diffraction and high resolution transmission electron microscopy. For film thicknesses smaller than 5 monolayers (ML), a two-dimensional (2D) growth of ZnTe on the As-rich c(4×4) reconstructed (001) GaAs surface is demonstrated. Analysis of the XPS Te 3d and Zn 2p signals from 1–4 ML thick ZnTe films reveals the existence of an interfacial As-Zn bonding state. Thus the 2D ZnTe growth on (001) GaAs is initiated by a Ga-As-Zn-Te sequence, in contrast with the GaAs-Te-Cd sequence in CdTe/(001) GaAs growth.
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