Formation of the seed layers for layer-transfer process silicon solar cells by zone-heating recrystallization of porous silicon structures

Abstract

Thin-film crystalline silicon is promising for photovoltaic application to reduce the cost of photovoltaic energy. Porous silicon structures have been intensively studied as a seed layer for epitaxial growth of thin Si film and layer-transfer process (LTP). In this article, another approach for LTP has been proposed. The seed layers for epitaxial silicon growth have been formed by zone-heating recrystallization of double-layer por-Si structures. The influence of annealing parameters on porous silicon structures was studied. The transformation of por-Si layer to crystalline Si was observed with the formation of smooth continuous surface with the roughness 0.3 nm, peak-to-valley distance around 3.5 nm, and reduced density of pores. The mechanism of the transformation of por-Si surface due to the action of hydrogen in the passivated pores with preventing surface oxidation was proposed.