Formation of the ordered ensemble of cobalt nanocylinders in pores of anodic aluminum oxide on the surface of GaAs structures

Abstract

A method for creation of cobalt nanocylinder quasi-regular ensembles with controlled height in the pores of anodic aluminum oxide on the surface of GaAs structures with a thin n-GaAs surface layer is developed. The pores of aluminum oxide are filled using galvanic deposition of cobalt from the CoCl2 solution, so that hydrogen emission is minimized and the uniform growth of cobalt in the pores is provided. The method is promising for development of the matrix hybrid magnetic-semiconductor structures for spintronics.