Abstract
Guided quantum dot self-assembly grown heteroepitaxially on a substrate surface prepatterned with cosinelike humps is studied by computer simulation. The $\mathrm{Si}\mathrm{Ge}∕\mathrm{Si}$ material system is used as a model system, in which the strain energy, surface energy, wetting effect, surface anisotropy, and elastic anisotropy are taken into account. The simulation results reveal the formation of surface structures which may potentially be of practical applications.
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