Abstract
We present a technique for the array formation of atomically step-free diamond surfaces on diamond (111) substrates by microwave plasma-enhanced chemical vapor deposition. With an appropriate choice of plasma conditions, the atomic steps initially present on each mesa surface move by lateral growth, and then, atomically step-free surfaces are successfully formed on diamond (111) mesas by microwave plasma-enhanced chemical vapor deposition. The lateral growth of diamond (111) films results in the formation of step-free surfaces with device dimensions up to 100 µm square on diamond (111) mesas. A limiting factor in scaling up the size and yield of the step-free mesas is the density of screw dislocations in the diamond substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
