Abstract
ABSTRACTFormation of a Si-on-insulator structure by a solid phase process was investigated. Examination by µ-RHEED method revealed that oriented crystal growth propagated from the seeding area by a solid phase epitaxy (SPE) in the low temperature range around 550 °C. In addition . a new local doping method was developed. This realized a relatively large lateral-SPE area on insulating regions (14 µm from the seeding area). Crystal quality and electrical properties of SPE layers were precisely examined utilizing µ-Raman spectroscopy and MOSFET fabrication. A small stress field and high electron mobility comparable to that of bulk Si were obtained.
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