Abstract
SiO2 films and their formation technologies are critical for the fabrication of Si-based integrated circuits (ICs). SiO2 films fabricated using plasma-enhanced chemical vapor deposition (PECVD) have become increasingly important because of the increasing trend of three-dimensional (3D) architectures in ICs. SiO2 films formed by PECVD have been widely studied for over 40 years; however, owing to the complex plasma reactions and the differences in system conditions, the relationship between the experimental parameters and film characteristics are disputed. In this study, focusing on the two important characteristics (surface morphology and deposition rate) of SiO2 films for 3 D ICs manufacturing, SiO2 film growth was systematically investigated via SiH4/Ar/N2O in PECVD; a theoretical reaction process model (including gas-phase reaction, chemical adsorption, and surface reaction) bridging the experimental parameters (chamber pressure, gas ratio, radio frequency power, and substrate temperature) and characteristics (surface morphology and deposition rate) of SiO2 films was established. This study contributes to the precise formation of sub-100 nanometer SiO2 films using PECVD for manufacturing 3 D ICs.
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