Abstract
A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm 2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.
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