Abstract
Deep level transient spectroscopy (DLTS) has been applied to study the formation of trivacancy-oxygen complexes in Si. Samples of p-type Czochralski grown (Cz) silicon, with a boron doping concentration of ~1x1015cm-3, have been irradiated at room temperature (RT) with 1.8 MeV protons to a dose of 5×1012cm-2. Two new energy levels at Ev+0.24 eV and Ev+0.11 eV (Evdenotes the valence band edge) emerge when the divacancy (V2) to divacancy-oxygen (V2O) transition takes place during post-irradiation annealing. The concentration is ~30% relative to V2(or V2O) and further, the two new levels exhibit an almost one-to-one correlation in strength. The present results strongly support that both levels are related to the same defect with a possible identification as single and double donor states of V3O.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
