Abstract
This study is concerned with physical and electrical properties of nitrogen-implanted silicon. Ellipsometric analysis and sheet-resistivity measurements of the retained silicon surface were made. Sheet resistivity was found to increase with increasing anneal time, in spite of silicon surface crystallinity recovery. Also, an in-depth morphological observation of silicon to buried silicon nitride transition layers was made, using optical and scanning electron microscope and electron diffraction. Dendritic growth of silicon nitride precipitates was observed for 3×1017/cm2 implanted and 1200 °C annealed samples.
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