Abstract
Silicon was pulse biased to −45 kV in a methane plasma generated by microwave excitation in the electron cyclotron resonance (ECR) mode. Hydrocarbon ions were accelerated in the electrical field and implanted into the silicon. Rutherford backscattering (RBS) measurements showed that it is possible to incorporate a concentration of up to 95 at.% C into the Si. Cross-section transmission microscopy (XTEM) showed that the resulting surface layer was amorphous. Annealing at 1250 °C resulted in the formation of 10 to 60 nm thick, crystalline SiC layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
