Abstract
In this work resonance-tunnel structure based on nano-composite films SiO2 (Si),which contain Si nanocrystals in a dielectric matrix have been formed by method of chemical deposition at low pressure (LP CVD — low pressure chemical vapor deposition) and ion plasma sputtering (IPS).Silicon nanosize structures were formed as on a flat surface and on the silicon tip. The formation of silicon nanoislands from silicon enriched SiOx films were performed during annealing at temperatures of 10000C, 1100°C and 10500C. AFM topography image of the original SiOx and annealing films, deposited by ion-plasma sputtering have been obtained. The influence of annealing for samples with different concentration of silicon in the initial film have been investeng on nanoclastersize. The effect of nonmonotonic electron field emission (EFE) from the surface film SiO2 (Si) formed by LP CVD method has been revealed.
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