Abstract
Formation of SiGe quasi-single crystal grains on insulator by the indentation-induced solid-phase crystallization has been investigated. The incubation time for nucleation was significantly reduced by the indentation. As a result, large (~2um) crystal grains were realized at controlled positions for samples with all Ge fractions. This method is expected to be useful for realization of the 3D-ULSIs and system-in-displays.
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