Abstract
SiGe Nanorod (NR) arrays have been fabricated by combining nanosphere lithography and Au-assisted chemical etching. With controlling the etching rate and duration, the length of SiGe NRs can be tuned from 300 nm to 1μnm. The morphology of SiGe NRs dramatically changed at different operating temperature. The results show a strong temperature dependence on fabrication of SiGe NRs. With TEM and SEM analysis, this work provides an effective approach to design the low-dimensional SiGe-based nanostructures for possible applications
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
