Abstract
Silicon carbide rods were formed in composites of silicon carbide/silicon dioxide/carbon (SiC/SiO2/C) from carbonized wood impregnated with ethyl silicate-40 after heat treatments using a pulse current apparatus. The effect of reaction temperatures, heating rates and pressures on the SiC rods formation was investigated. Raman spectroscopy indicated that the SiC rods possessed well crystalline. The SiC rods in the composites prepared at 1200 and 1400°C exhibited straight structure with smooth surfaces. The increase of reaction temperature up to 1600°C increased the length and diameter of SiC rods which exhibited a camelback-type structure. Different heating rate only determined the length of SiC rods grown; meanwhile the increase of pressure from 0 to 15 MPa increased the length and diameter of SiC rods grown.
Highlights
Considerable interest has developed in the use of wood-based carbon material as a new source of carbon for engineering applications such as for electromagnetic shielding (Wang and Hung 2003), adsorbent of heavy metals from aqueous solution (Pulido et al 1998), fire retardant material (Subyakto et al 2000), thermal management in space solar power satellite (Sulistyo et al 2009), electrical and thermal conductive material (Sulistyo et al 2010), etc
The silicon carbide (SiC) rods in the composites prepared at 1200 and 1400°C exhibited a straight structure with smooth surfaces
SiC rods were grown in composites of SiC/SiO2/C from carbonized wood
Summary
Considerable interest has developed in the use of wood-based carbon material as a new source of carbon for engineering applications such as for electromagnetic shielding (Wang and Hung 2003), adsorbent of heavy metals from aqueous solution (Pulido et al 1998), fire retardant material (Subyakto et al 2000), thermal management in space solar power satellite (Sulistyo et al 2009), electrical and thermal conductive material (Sulistyo et al 2010), etc. Various fabrication methods were used to form nano SiC rod including sol-gel method (Hata et al 2005; Cheung and Ng. 2007), nanotube confining growth, carbothermal reduction, chemical vapor deposition, laser ablation and chemical vapor infiltration (Zhu et al 2005). A simple sol-gel method was developed to grow SiC rods possessing different morphologies and dimensions in composites of SiC/SiO2/C by various heat treatments using a pulse current apparatus. The pulse current apparatus promotes a fast heat treatment in which the reaction temperature can be achieved in a short time. The purpose of this study was to investigate the formation of SiC rods related to the heat treatment conditions including reaction temperatures, heating rates and pressures. The crystal phase of the composite and the crystal structure of SiC rods were analyzed by X-ray diffraction and Raman spectroscopy, respectively
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