Abstract
We describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS) as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with sizes ranging from 7 nm to about 20 nm according to BET and XRD measurements are produced. The dependency of the particle size on the process parameters is evaluated statistically and explained with growth-rate equations derived from the theory of Ostwald ripening. The results show that the particle size is mainly influenced by the concentration of the precursor material in the plasma.
Highlights
Silicon Carbide (SiC) is a solid with various applications in materials science
An important advantage of the plasma process for nanoparticle synthesis is that the electrons escaping from the plasma zone are attached to surfaces in contact with the plasma, causing a negative charge at the plasma boundary and a positive bulk plasma potential
A negative charge on the nanoparticle surface suppresses their agglomeration [9,21], making the plasma synthesis an ideal tool for nanoparticle formation
Summary
Silicon Carbide (SiC) is a solid with various applications in materials science. It is used, e.g., as a wear-resistant material, as a heterogeneous catalyst, and in the production of semiconductors. SiC nanoparticles exhibit properties different from the bulk material and allow the creation of composite materials with new properties. Their production has been studied by different methods such as the thermal pyrolysis of organic precursors [3,4,5], or plasma synthesis by means of DC thermal [6], inductive [7,8] or low-pressure microwave plasmas [9].
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