Abstract
Bilayer DLC/a-Si films was deposited on germanium substrate. a-Si films was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC films was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor growth in thickness of a-Si and DLC films, allowing a good control over growth conditions. The thickness of DLC and a-Si layers were 9 nm and 6 nm, respectively. In this work, the interface of a-Si and DLC layers was investigated by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). It was found that the SiC layer was formed at the interface of a-Si and DLC layers.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
