Abstract
Formation of SiC from rice husk silica and carbon black mixture with Co catalyst, and without any catalyst, has been studied by rapid heating to 1300–1600 °C. Formation of SiC in CoCl 2 treated mixture was rapid at and above 1400 °C. However, in the untreated mixture considerable quantities of SiC has formed only above 1500 °C. Total SiC content and SiC whisker yield in the treated mixture were higher than that in the untreated mixture.
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