Formation of SiC from rice husk silica-carbon black mixture: Effect of rapid heating

Abstract

Formation of SiC from rice husk silica and carbon black mixture with Co catalyst, and without any catalyst, has been studied by rapid heating to 1300–1600 °C. Formation of SiC in CoCl 2 treated mixture was rapid at and above 1400 °C. However, in the untreated mixture considerable quantities of SiC has formed only above 1500 °C. Total SiC content and SiC whisker yield in the treated mixture were higher than that in the untreated mixture.