Abstract
Plasma-enhanced oxidation of silicon surfaces at low temperatures has been performed using microwave-excited O2 gas or a O2-N2 mixture. The time dependence of the oxide thickness has a parabolic relationship for both cases, and the parabolic rate constant for the oxidation by an excited O2-N2 mixture is larger by a factor of 2 compared with the case of excited O2 gas only. It is also found that the activation energy of the parabolic rate constant is 0.71 eV for the excited O2-N2 mixture and 1.15 eV for the excited O2 gas. The enhanced oxidation rate depends on the flow rate ratio of O2 to N2. This effect is considered to be due to reactive species created by reactions associated with NO, which varies with the ratio of O2 to N2.
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