Abstract
Si nanocrystallites were formed in Al-added amorphous Si films (Al/a-Si, a-AlxSi1-x) by the irradiation of a focused electron beam. In-situ heating of the a-Al0.025Si0.975 films was performed at temperatures up to 400 °C. The size, shape, and concentration of the Si crystallites varied significantly with the film temperature and electron beam irradiation time. Si nanocrystallites with a mean size of ∼10 nm were formed when the films were kept at 200 °C, and irradiated using an electron beam with a current density of 15.7 pA/cm2. The total crystallite volume fraction in the films increased from ∼9.2 to ∼94.8% with increasing temperature from 100 to 400 °C. The estimated activation energy for the crystallization in the a-Al0.025Si0.975 film under the electron beam irradiation was 0.78±0.05 eV.
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