Formation of Si 3N 4 by nitrogen implantation into SiC

Abstract

Polycrystalline SiC and a bilayer of thin Zr deposited on SiC (Zr-SiC) were implanted with 50 keV 15N ions at fiuences in the range (0.25–1.5) × 10 18 ions cm −2 at elevated temperature up to 1100 °C. After implantation, the depth profiles of the elements were measured using Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA) and Auger electron spectroscopy (AES). The structure and chemical bonding state of the implanted layer were investigated by glancing angle X-ray diffraction (G-XRD) and X-ray photoelectron spectroscopy (XPS). It was found that the maximum concentration and halfwidth of the nitrogen profile implanted at 1100 °C were strongly decreased in comparison with those at room temperature, and nitrogen implantation into SiC at 1100 °C resulted in a composite layer of β-Si 3N 4 and SiC. In Zr-SiC, the interfacial reaction of Zr and SiC was observed at high temperature, and a composite layer of ZrC, β-Si 3N 4 and SiC was formed by nitrogen implantation.