Abstract
This work is a part of a deeper study into technologies developed for the so-called active tips for use in scanning probe microscopy. This paper show that using an AlAs facet-forming sacrificial layer and a H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> PO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> , H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O based solution, symmetric pyramidal structures with tip diameter below 35 nm can be prepared. Such pyramidal objects was used for further MOCVD overgrowth. Finally, the quality of the mesa sidewalls obtained was controlled using the SEM and AFM. The pyramids are suitable for the next processing, and various semiconductor devices can be prepared on the pyramid
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