Formation of shallow junctions in gallium and phosphorus compensated silicon for cell performance improvement

Abstract

Solar cells have been fabricated from gallium and phosphorus compensated Czochralski silicon wafer. It is found that these solar cells have shallower n+p junctions, compared to those based on conventional silicon. The cell efficiencies under 1 sun illumination are on average 0.2% higher than those of conventional solar cells. This improvement is associated with the better spectral response in the short-wavelength range, due to the formation of shallower junctions.