Abstract
The results of studying the formation of selenium-related complexes in silicon are reported. On the basis of analyzing the kinetics of the donor-center formation, the composition of the simplest complexes and the main parameters of their formation were determined. The polymerization process Se + Sen−1 ↔ Sen of selenium atoms was analyzed; this analysis made it possible to describe quantitatively the features of in-diffusion of selenium atoms from the implanted region to the crystal bulk. The equilibrium solubility of selenium in silicon is regarded as a result of the formation of monomers with limited concentration in the course of formation of the complexes.
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