Abstract
I developed a simple crystal growth process to obtain a single Ga crystal. The crystal orientation of a Ga plate could be controlled by a crystal growth process using a seed Ga crystal. By anodizing a [100]-direction highly oriented Ga plate, I realized the formation of a highly ordered array of high-aspect-ratio straight nanoholes. It was observed that the nanohole growth direction depends on the crystal orientation of a Ga plate. To date, this dependence has yet to be observed in materials other than porous Ga oxide obtained by an anodization process. The present fabrication process is expected to be applied to the fabrication of various functional devices requiring a porous Ga oxide with high-aspect-ratio straight nanoholes, such as hydrogen formation devices and functional filters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
