Abstract
The formation of platinum silicide at the interface between a-Si:H (and a-Si alloys) and a surface platinum layer is found to depend strongly on the hydrogen content and the structure of the amorphous films. The formation process is diffusion-limited with a diffusion coefficient comparable to c-Si for hydrogen-poor a-Si:H films as well as for films with microstructural effects. The considerably smaller diffusion coefficient observed for device-grade a-Si:H films is attributed to hydrogen accumulation at the silicide-Pt interface.
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