Formation of Platinum Nanodendrites Embedded Organic Insulator for Memory Application

Abstract

This work describes the formation of platinum nanodendrites (PtNDs) using the chemical reduction method. The PtNDs were formed with varying concentration of K2PtCl4 precursor (5-20 mM) and growth duration (8-16 min). The optimum concentration of K2PtCl4 was 15 mM whereby high crystalline nanodendrites with an average size of 118 nm were produced. Aggregation of nanodendrites occurred when the growth duration was prolonged to more than 12 minutes. The morphology and size of PtNDs were characterized by using a transmission electron microscope (TEM), high resolution transmission electron microscope (HRTEM) and X-ray diffractometer (XRD). Additionally, the memory characteristics of PtNDs embedded in polymethylsilsesquioxanes (PMSSQ)/Si with gold electrodes were studied in this work. PtNDs played a role as charge-trapped sites and showed good memory effect when embedded in PMSSQ. Optimum memory properties of PMSSQ-embedded PtNDs were obtained for PtNDs synthesized with 15 mM K2PtCl4 concentration at 12 min of growth duration with 170 electrons trapped per PtNDs and Vth of 2.8 V.