Abstract
Phase transitions and periodic surface modification in amorphous Ge2Sb2Te5 thin films on multilayer substrate were revealed as a result of the samples irradiation by femtosecond laser pulses with the wavelength of 1250 nm. Raman spectroscopy revealed partial crystallization in the treated samples. Calculations and analysis of scanning electron and atomic-force microscopy data showed that formation of the periodic surface structures is related to photoinduced surface plasmon-polariton excitation and depends on laser radiation fluence. The obtained results are useful for design and fabrication of new promising data-storage and polarization optics devices.
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